JPS6346586B2 - - Google Patents

Info

Publication number
JPS6346586B2
JPS6346586B2 JP52065025A JP6502577A JPS6346586B2 JP S6346586 B2 JPS6346586 B2 JP S6346586B2 JP 52065025 A JP52065025 A JP 52065025A JP 6502577 A JP6502577 A JP 6502577A JP S6346586 B2 JPS6346586 B2 JP S6346586B2
Authority
JP
Japan
Prior art keywords
type semiconductor
insulating film
gate electrode
semiconductor layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52065025A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53149771A (en
Inventor
Kazutoshi Nagano
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6502577A priority Critical patent/JPS53149771A/ja
Publication of JPS53149771A publication Critical patent/JPS53149771A/ja
Publication of JPS6346586B2 publication Critical patent/JPS6346586B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP6502577A 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture Granted JPS53149771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6502577A JPS53149771A (en) 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6502577A JPS53149771A (en) 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS53149771A JPS53149771A (en) 1978-12-27
JPS6346586B2 true JPS6346586B2 (en]) 1988-09-16

Family

ID=13275012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6502577A Granted JPS53149771A (en) 1977-06-01 1977-06-01 Mis-type semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS53149771A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284964A (ja) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型電界効果トランジスタ及びその製法
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
WO1990011616A1 (en) * 1989-03-21 1990-10-04 Grumman Aerospace Corporation Trench gate complimentary metal oxide semiconductor transistor
WO1990011615A1 (en) * 1989-03-21 1990-10-04 Grumman Aerospace Corporation Trench gate metal oxide semiconductor transistor
US5108938A (en) * 1989-03-21 1992-04-28 Grumman Aerospace Corporation Method of making a trench gate complimentary metal oxide semiconductor transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093779A (en]) * 1973-12-21 1975-07-26
JPS51118383A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for mos type semiconductor unit

Also Published As

Publication number Publication date
JPS53149771A (en) 1978-12-27

Similar Documents

Publication Publication Date Title
JPS6237551B2 (en])
JPH02210871A (ja) 半導体装置
JP2543416B2 (ja) 半導体装置
JPS6346586B2 (en])
JP2782781B2 (ja) 半導体装置の製造方法
JPS62160770A (ja) 絶縁ゲート型電界効果トランジスタおよびその製造方法
JP2968078B2 (ja) Ｍｏｓトランジスタの製造方法
JPS6025028B2 (ja) 半導体装置の製造方法
KR100192364B1 (ko) 모스 트랜지스터 제조방법
JP2776891B2 (ja) 半導体集積回路装置
JPS6237543B2 (en])
JPS6110987B2 (en])
JPH0239091B2 (en])
KR910009042B1 (ko) 반도체장치의 제조방법
JPS6156448A (ja) 相補型半導体装置の製造方法
JPS60136377A (ja) 絶縁ゲ−ト半導体装置の製造法
JPS61125084A (ja) 半導体集積回路装置
JPH0582066B2 (en])
JPH03153081A (ja) 電界効果型トランジスタおよびその製造方法
JPH0669507A (ja) パワーｍｏｓｆｅｔ
JP2630863B2 (ja) 絶縁ゲート型半導体装置の製造方法
JPH0461497B2 (en])
JPH01238066A (ja) 高耐圧トランジスタ
JPH05235290A (ja) 半導体装置及びその製造方法
JPS61176154A (ja) 半導体装置の製造方法